Publications

1992-2011

2010
Background and Photoexcited Carrier Dependence of Terahertz Radiation from Mg-Doped Nonpolar Indium Nitride Films
Hyeyoung Ahn, Yi-Jou Yeh, Yu-Liang Hong, and Shangjr Gwo
Appl. Phys. Express vol. 3, 22105 (2010)

Inorganic Gyroid with Exceptionally Low Refractive Index from Block Copolymer Templating
Han-Yu Hsueh, Hung-Ying Chen, Ming-Shiuan She, Chun-Ku Chen, Rong-Ming Ho, Shangjr Gwo, Hirokazu Hasegawa, and Edwin L. Thomas
Nano Lett. vol. 10 (12), pp 4994–5000 (2010)

Electronic structure of silicon nitride according to ab initio quantum-chemical calculations and experimental data
S. S. Nekrashevich, V. A. Gritsenko, R. Klauser and S. Gwo
Journal of Experimental and Theoretical Physics vol. 111, Issue 4, pp.659-666 (2010)

Highly Sensitive Hydrogen Detection Using a Pt-Catalyzed InN Epilayer
Yuh-Hwa Chang, Kai-Kuen Chang, Shangjr Gwo, and J. Andrew Yeh
Appl. Phys. Express vol. 3, 114101 (2010)

Terahertz Radiation Mechanism of Native n-Type InN with Different Carrier Concentration
Jenn-Shyong Hwang, Jung-Tse Tsai, Kuang-I Lin, Ming-Hsun Lee, Chiang-Nan Tsai, Hon-Way Lin, Shangjr Gwo, and Meng-Chu Chen
Appl. Phys. Express vol. 3, 102202 (2010)

InGaN/GaN nanorod array white light-emitting diode
Hon-Way Lin, Yu-Jung Lu, Hung-Ying Chen,Hong-Mao Lee, and Shangjr Gwo
Appl. Phys. Lett. vol. 97, 073101 (2010)

Carrier dynamics of Mg-doped indium nitride
H. Ahn, K.-J. Yu, Y.-L. Hong, and S. Gwo
Appl. Phys. Lett. vol. 97, 062110 (2010)

Layer-by-Layer Assembly of Three-Dimensional Colloidal Supercrystals with Tunable Plasmonic Properties
Meng-Hsien Lin, Hung-Ying Chen, and Shangjr Gwo*
J. Am. Chem. Soc. vol. 132, pp. 11259–11263 (2010)

Surface-Plasmon-Mediated Photoluminescence Enhancement from Red-Emitting InGaN Coupled with Colloidal Gold Nanocrystals
Chen-Ying Wu, Chieh-Lun He, Hong-Mao Lee, Hung-Ying Chen and Shangjr Gwo*
J. Phys. Chem. C vol. 114, pp. 12987–12993 (2010)

Infrared photoluminescence from α- and β-copper phthalocyanine nanostructures
W.Y. Tong, H.Y. Chen, A.B. Djurišić, A.M.C. Ng, H. Wang, S. Gwo and W.K. Chan
Optical Materials vol. 32, Issue 9, pp. 924-927 (2010)

Resonant Raman Scattering and Dispersion of Polar Optical and Acoustic Phonons in Hexagonal InN
V. Yu. Davydov, A. A. Klochikhin, A. N. Smirnov, I. Yu. Strashkova, A. S. Krylov, Hai Lu, William J. Schaff, H. -M. Lee, Y. -L. Hong and S. Gwo
SEMICONDUCTORS vol. 44, pp. 161-170 (2010)

Chloride ion detection by InN gated AlGaN/GaN high electron mobility transistors
Byung-Hwan Chu, Hon-Way Lin, Shangjr Gwo, Yu-Lin Wang, S. J. Pearton, J. W. Johnson, P. Rajagopal, J. C. Roberts, E. L. Piner, K. J. Linthicuni, and Fan Ren
J. Vac. Sci. Technol. B vol. 28, L5 (2010)

Effects of (NH4)(2)S-x treatment on indium nitride surfaces
Yuh-Hwa Chang, Yen-Sheng Lu, Yu-Liang Hong, Cheng-Tai Kuo, Shangjr Gwo, and J. Andrew Yeh
J. Appl. Phys. vol. 107, 043710 (2010)

Observation of sub-100 femtosecond electron cooling time in InN
Yi-En Su, Yu-Chieh Wen, Hong-Mao Lee, Shangjr Gwo, and Chi-Kuang Sun
Appl. Phys. Lett. vol. 96, 052108 (2010)

Site-Selective Biofunctionalization of Aluminum Nitride Surfaces Using Patterned Organosilane Self-Assembled Monolayers
Chi-Shun Chiu, Hong-Mao Lee and Shangjr Gwo*
Langmuir vol. 26, pp. 2969–2974 (2010)

Plasmon hybridization in individual gold nanocrystal dimers: Direct observation of bright and dark modes
S.-C. Yang, H. Kobori, C.-L. He, M.-H. Lin, H.-Y. Chen, C. Li,M. Kanehara, T. Teranishi, and S. Gwo*
Nano Lett. vol. 10, pp. 632–637 (2010)

The electrostatic coupling of longitudinal optical phonon and plasmon in wurtzite InN thin films
Y.-M. Chang, S. C. Liou, C. H. Chen, H.-M. Lee, and S. Gwo
Appl. Phys. Lett. vol. 96, 041908 (2010)

The facile fabrication of tunable plasmonic gold nanostructure arrays using microwave plasma
Chuen-Yuan Hsu, Jing-Wen Huang, Shangjr Gwo and Kuan-Jiuh Lin
Nanotechnology, vol. 21 035302 (2010)

2009

Terahertz emission mechanism of magnesium doped indium nitride
H. Ahn,* Y.-J. Yeh , Y.-L. Hong , S. Gwo
Appl. Phys. Lett. vol. 95, 232104 (2009)

Valence band offset and interface stoichiometry at epitaxial Si3N4/Si(111) heterojunctionsformed by plasma nitridation
H.-M. Lee, C.-T. Kuo, H.-W. Shiu, C.-H. Chen, and S. Gwo*
Appl. Phys. Lett. vol. 95, 222104 (2009)

Well-aligned multi-walled carbon nanotubes emitting natural white-light under microwave irradiation
J.-W. Su, S. Gwo, and K.-J. Lin*
Chem. Commun. pp. 6777–6779(2009)

Spectral dependence of time-resolved photoreflectance of InN epitaxial films
T.-R. Tsai,* C.-Y. Chang, C.-W. Kuo, J.-S. Hwang, T.-Y. Lin, and S. Gwo
Appl. Phys. Lett. vol. 95, 142108 (2009)

GaN/ZnO nanorod light emitting diodes with different emission spectra
Y. F. Hsu, Y. Y. Xi, A. M. C. Ng, A. B. Djurisic,* W. K. Chan, S. Gwo, H. L. Tam, K. W. Cheah, P. W. K. Fong, H. F. Lui, C. Surya
Nanotechnology vol. 20, 445201 (2009)

Strong green photoluminescence from InxGa1-xN/GaN nanorod arrays
C.-C. Hong, H. Ahn,* C.-Y. Wu, and S. Gwo
Optics Express vol. 17, pp. 17227–17233 (2009)

Investigation on -c-InN and a-InN:Mg field effect transistors under electrolyte gate bias
Y.-S. Lu, Y.-H. Chang, J. A. Yeh,* Y.-L. Lin, H.-M. Lee, and S. Gwo
Appl. Phys. Lett. vol. 95, 102104 (2009)

Selective excitation of E1(LO) and A1(LO) phonons with large wave vectors in the Ramanspectra of hexagonal InN
V. Yu. Davydov,* A. A. Klochikhin, A. N. Smirnov, I. Yu. Strashkova, A. S. Krylov, H. Lu, W. J. Schaff, H.-M. Lee, Y.-L. Hong, and S. Gwo
Phys. Rev. B (Rapid Communication) vol. 80, 081204(R) (2009)

Multilength-scale chemical patterning of self-assembled monolayers by spatially controlledplasma exposure: Nanometer to centimeter range
M.-H. Lin, C.-F. Chen, H.-W. Shiu, C.-H. Chen, and S. Gwo*
J. Am. Chem. Soc. vol. 131, pp. 10984–10991 (2009)

Direct imaging of GaN p-n junction by cross-sectional scanning photoelectron microscopyand spectroscopy
C.-T. Kuo, H.-M. Lee, H.-W. Shiu, C.-H. Chen, and S. Gwo*
Appl. Phys. Lett. vol. 94, 122110 (2009)

Carrier and phonon dynamics of wurtzite InN nanorods
Y.-M. Chang* and S. Gwo
Appl. Phys. Lett. vol. 94, 071911 (2009)

Localized states in InxGa1–xN epitaxial film
H.-S. Chang, T. M. Hsu,* T.-F. Chuang, W.-Y. Chen, S. Gwo, and C.-H. Shen,
Solid State Communications vol. 149, pp. 18–20 (2009)

2008

Surface states on the n-InN-electrolyte interface
A. A. Gutkin, M. E. Rudinsky, P. N. Brunkov, A. A. Klochikhin, V. Yu. Davydov, H.-Y. Chen, and S. Gwo
Semiconductor vol. 42, pp. 1416–1419 (2008)

Fabrication of porous carbon nanotube network
J.-W. Su, S.-J. Fu, S. Gwo, and K.-J. Lin
Chem. Commun. pp. 5631–5632 (2008)

Immobilization of DNA–Au nanoparticles on aminosilane-functionalized aluminumnitride epitaxial films for surface acoustic wave sensing
C.-S. Chiu, H.-M. Lee, C.-T. Kuo, and S. Gwo
Appl. Phys. Lett. vol. 93, 163106 (2008)

Direct probe of the built-in electric field of Mg-doped a-plane wurtzite InN surfaces withtime-resolved electric-field-induced second harmonic generation
Y.-M. Chang, Y.-L. Hong, and S. Gwo
Appl. Phys. Lett. vol. 93, 131106 (2008)

Absence of Fermi level pinning at cleaved nonpolar InN surfaces
C.-L. Wu, H.-M. Lee, C.-T. Kuo, C.-H. Chen, and S. Gwo
Phys. Rev. Lett. vol. 101, 106803 (2008)

Polarized photoluminescence from single GaN nanorods: Effects of optical confinement
H.-Y. Chen, Y.-C. Yang, H.-W. Lin, S.-C. Chang, and S. Gwo
Optics Express vol. 16, pp.13465–13475 (2008)

Ultrafast E1(LO) phonon and plasmon dynamics in a-plane wurtzite InN
Y.-M. Chang, H.-W. Lin, Y.-L. Hong, and S. Gwo
J. Appl. Phys. Lett. vol. 104, 036105 (2008)

Two-dimensional carrier profiling by Kelvin-probe force Microscopy
B.-Y. Tsui, C.-M. Hsieh, P.-C. Su, S.-D. Tzeng, and S. Gwo
Jpn J. Appl. Phys. vol. 47, pp. 4448–4453 (2008)

Observation of femtosecond carrier thermalization time in indium nitride
S.-Z. Sun, Y.-C. Wen, S.-H. Guol, H.-M. Lee, S. Gwo, and C.-K. Sun
J. Appl. Phys. vol. 103, 123513 (2008)

Anion detection using ultrathin InN ion selective field effect transistors
Y.-S. Lu, C.-L. Ho, J. A. Yeh, H.-W. Lin, and S. Gwo
Appl. Phys. Lett. vol. 92, 212102 (2008)

Gallium nitride nanorod arrays as low-refractive-index transparent media in the entirevisible spectral region
H.-Y. Chen, H.-W. Lin, C.-Y. Wu, W.-C. Chen, J.-S. Chen, and S. Gwo
Optics Express vol. 16, pp. 8106–8116 (2008)

Facile synthesis of large scale Er-doped ZnO flower-like structures with enhanced 1.54 m infrared emission
W.-C. Yang, C.-W. Wang, J.-H. He, Y.-C. Chang, J.-C. Wang, L.-J. Chen, H.-Y. Chen, and S. Gwo
Phys. Stat. Sol. A vol. 205, pp. 1190–1195 (2008)

SIMS and Raman studies of Mg-doped InN
V. Yu. Davydov, A. A. Klochikhin, M. B. Smirnov, Yu. E. Kitaev, A. N. Smirnov, E. Y. Lundina, H. Lu, W. J. Schaff, H.-M. Lee, H.-W. Lin, Y.-L. Hong, S. Gwo
Phys. Stat. Sol. C vol. 5, pp. 1648–1651 (2008)

Quantitative surface acoustic wave detection based on gold nanoparticles and theirbioconjugates
C.-S. Chiu and S. Gwo
Anal. Chem. vol. 80, pp. 3318–3326 (2008)

Cross-sectional photoelectron microscopy and spectroscopy of wurtzite InN/GaNheterojunction: Measurement of intrinsic band lineup
C.-L. Wu, H.-M. Lee, C.-T. Kuo, C.-H. Chen, and S. Gwo
Appl. Phys. Lett. vol. 92, 162106 (2008)

Intense terahertz emission from a-plane InN surface
H. Ahn, Y.-P. Ku, C.-H. Chuang, C.-L. Pan, H.-W. Lin, Y.-L. Hong, and S. Gwo
Appl. Phys. Lett. vol. 92, 102103 (2008)

Tunable plasmonic response from alkanethiolate-stabilized gold nanoparticle superlattices:Evidence of near-field coupling
C.-F. Chen, S.-D. Tzeng, H.-Y. Chen, K.-J. Lin, and S. Gwo
J. Am. Chem. Soc. (Communication) vol. 130, pp. 824–826 (2008)

2007

Classical and quantum solutions of the planar accumulation layer problem within theparabolic effective-mass approximation,
A. A. Klochikhin, V. Yu. Davydov, I. Yu. Strashkova, and S. Gwo,
Phys. Rev. B vol. 76, 235325 (2007)

InN-based anion selective sensors in aqueous solutions,
Y.-S. Lu, C.-C. Huang, J. A. Yeh, C.-F. Chen, and S. Gwo,
Appl. Phys. Lett. vol. 91, 202109 (2007)

Enhanced chemical shift of carbon nanotube from laser assisted gas incorporation
C.-H. Chuang, C.-H. Chen, Y.-M. Chang, C.-W. Peng, S.-S. Wong, S.-D. Tzeng, S. Gwo, Y. Zhu, C.-H. Sow, and M.-T. Lin
Appl. Phys. Lett. vol. 91, 183101 (2007)

Direct measurement of momentum relaxation time in wurtzite InN
Y.-M. Chang and S. Gwo
J. Appl. Phys. vol. 102, 083540 (2007).

Terahertz spectroscopic study of vertically-aligned InN nanorods
H. Ahn, Y.-P. Ku, Y.-C. Wang, C.-H. Chuang, S. Gwo, C.-L. Pan
Appl. Phys. Lett. vol. 91, 163105 (2007)

Terahertz emission from vertically aligned InN nanorod arrays
H. Ahn, Y.-P. Ku, Y.-C. Wang, C.-H. Chuang, S. Gwo, C.-L. Pan
Appl. Phys. Lett. vol. 91, 132108 (2007)

Experimental and theoretical studies of lattice dynamics of Mg-doped InN
V. Yu. Davydov, A. A. Klochikhin, M. B. Smirnov, A. N. Smirnov, I. N. Goncharuk, D. A. Kurdyukov, H. Lu, W. J. Schaff, H.-M. Lee, H.-W. Lin, S. Gwo
Appl. Phys. Lett. vol. 91, 111917 (2007)

Polarization-induced valence-band alignments at cation- and anion-polar InN/GaNheterojunctions
C.-L. Wu, H.-M. Lee, C.-T. Kuo, S. Gwo, and C.-H. Hsu
Appl. Phys. Lett. vol. 91, 042112 (2007)

Ultrafast hot electron relaxation time anomaly in InN epitaxial films
T.-R. Tsai, C.-F. Chang, and S. Gwo
Appl. Phys. Lett. vol. 90, 252111 (2007)

Electron-density dependence of longitudinal-optical phonon lifetime in InN studied bysubpicosecond time-resolved Raman spectroscopy
K. T. Tsen, J. G. Kiang, D. K. Ferry, H. Lu, W. J. Schaff, H.-W. Lin, and S. Gwo
J. Phys.-Condens. Mat. vol. 19, 236219 (2007)

Calculations of optical properties of an annular dielectric mirror
C.-J. Wu and S. Gwo
J. of Electromagn. Waves and Appl. vol. 21, pp. 821–827 (2007).

Band bending of n-InN epilayers and exact solution of the classical Thomas-Fermiequation
A. A. Klochikhin, V. Yu. Davydov, I. Yu. Strashkova, P. N. Brunkov, A. A. Gutkin, M. E. Rudinsky, H.-Y. Chen, and S. Gwo
Phys. Stat. Sol.-Rapid Res. Lett. vol. 1, pp. 159–161 (2007)

Subpicosecond time-resolved Raman studies of electron-longitudinal optical phononinteractions in InN
K. T. Tsen, J. G. Kiang, D. K. Ferry, H. Lu, W. J. Schaff, H.-W. Lin, and S. Gwo
Appl. Phys. Lett. vol. 90, 172108 (2007)

Direct measurements of the lifetimes of longitudinal optical phonon modes and theirdynamics in InN
K. T. Tsen, J. G. Kiang, D. K. Ferry, H. Lu, W. J. Schaff, H.-W. Lin, and S. Gwo
Appl. Phys. Lett. vol. 90, 152107 (2007)

Effects of proton irradiation on electrical and optical properties of n-InN
V. V. Emtsev, V. Yu. Davydov,A. A. Klochikhin, A. V. Sakharov, A. N. Smirnov, V. V. Kozlovskii, C.-L. Wu, C.-H. Shen, and S. Gwo
Phys. Stat. Sol. C vol. 4, pp. 2589–2592 (2007)

Unusual photoluminescence properties of vertically aligned InN nanorods grown byplasma-assisted molecular-beam epitaxy
C.-H. Shen, H.-Y. Chen, H.-W. Lin, C.-Y. Wu, C.-H. Chen, S. Gwo, A. A. Klochikhin, and V. Yu. Davydov
Phys. Stat. Sol. C vol. 4, pp. 2465–2468 (2007)

High current density InN/AlN heterojunction field-effect transistor with a SiNx gatedielectric layer
Y.-S. Lin, S.-H. Koa, C.-Y. Chan, and S. S. H. Hsu, H.-M. Lee and S. Gwo
Appl. Phys. Lett. vol. 90, 142111(2007)

Determination of the electron effective mass of wurtzite InN by coherent upper-branchA1(LO) phonon-plasmon coupling mode
Y.-M. Chang, H. W. Chu, C.-H. Shen, H.-Y. Chen, and S. Gwo
Appl. Phys. Lett. vol. 90, 072111 (2007)

Identification of surface optical phonon in wurtzite InN epitaxial thin films by coherentphonon spectroscopy
Y.-M. Chang, H. W. Chu, C.-H. Shen, and S. Gwo
Appl. Phys. Lett. vol. 90, 072110 (2007)

2006

Organosilane functionalization of InN surface
C.-F. Chen, C.-L. Wu, and S. Gwo
Appl. Phys. Lett. vol. 89, 252109 (2006)

Structure and photoluminescence properties of epitaxially oriented GaN nanorods grownon Si(111) by plasma-assisted molecular-beam epitaxy
H.-Y. Chen, H.-W. Lin, C.-H. Shen, and S. Gwo
Appl. Phys. Lett. vol. 89, 243105 (2006)

Synthesis of pyramidal copper nanoparticles on gold substrate
W.-Y. Ko, W.-H. Chen, S.-D. Tzeng, S. Gwo, and K.-J. Lin
Chem. Mater. vol. 18, pp. 6097–6099 (2006)

Ultrafast carrier thermalization in InN
Y.-C. Wen, C.-Y. Chen, C.-H. Shen, S. Gwo, and C.-K. Sun
Appl. Phys. Lett. vol. 89, 232114 (2006)

Near-infrared photoluminescence of vertically aligned InN nanorods grown on Si(111) byplasma-assisted molecular-beam epitaxy
H.-Y. Chen, C.-H. Shen, H.-W. Lin, C.-H. Chen, C.-Y. Wu, S. Gwo, V. Yu. Davydov, and A. A. Klochikhin
Thin Solid Films vol. 515, 961–966 (2006)

Metal phthalocyanine nanoribbons and nanowires
W. Y. Tong, A. B. Djurisic , M. H. Xie, A. C. M. Ng, K. Y. Cheung, W. K. Chan, Y. H. Leung, H. W. Lin, and S. Gwo
J. Phys. Chem. B vol. 110, pp. 17406–17413 (2006)

Electrostatic assembly of gold colloidal nanoparticles on organosilane monolayerspatterned by microcontact electrochemical conversion
C.-F. Chen, S.-D. Tzeng, M.-H. Lin, and S. Gwo
Langmuir vol. 22, pp. 7819–7824 (2006)

Charge trapping properties at Si3N4/SiO2 interface studied by variable-temperatureelectrostatic force microscopy
S.-D. Tzeng and S. Gwo
J. Appl. Phys. vol. 100, 023711 (2006)

Near-infrared photoluminescence from vertical InN nanorod arrays grown on silicon:Effects of surface electron accumulation layer
C.-H. Shen, H.-Y. Chen, H.-W. Lin, S. Gwo, A. A. Klochikhin, and V. Yu. Davydov
Appl. Phys. Lett. vol. 88, 253104 (2006)

Straight and helical InGaN core-shell nanowires with a high In core content
X. M. Cai, Y. H. Leung, K. Y. Cheung, K. H. Tam, A. B. Djurisic, M. H. Xie, H. Y. Chen, and S. Gwo
Nanotechnology vol. 17, pp. 2330–2333 (2006)

Templated self-assembly of colloidal nanoparticles controlled by electrostaticnanopatterning on Si3N4/SiO2/Si electret
S.-D Tzeng, K.-J. Lin, J.-C. Hu, L.-J. Chen, and S. Gwo
Advanced Materials vol. 18, pp. 1147–1151 (2006)

Green, yellow, and orange defect emission from ZnO nanostructures: influence ofexcitation wavelength
A. B. Djurisic, Y. H. Leung , K. H. Tam , L. Ding , W. K. Ge , H. Y. Chen , and S. Gwo
Appl. Phys. Lett. vol. 88, 103107 (2006). Color graphic of this work printed as the cover of the 6 March 2006 issue

The effects of AlN buffer on the properties of InN epitaxial films grown on Si(111) byplasma-assisted molecular-beam epitaxy
C.-L. Wu, C.-H. Shen, H.-Y. Chen, S.-J. Tsai, H.-W. Lin, H.-M. Lee, and S. Gwo, T.-F. Chuang, H.-S. Chang, and T. M. Hsu
J. of Cryst. Growth vol. 288, pp. 247–253 (2006)

Optical properties of highly faceted ZnO rods
A. B. Djurisic, W. M. Kwok, W. K. Chan, D. L. Phillips, H. Y. Chen, C. L. Wu, and S. Gwo
J. Appl. Phys. vol. 99, 033517 (2006)

Valence band offset of wurtzite InN/AlN commensurate heterojunction determined byphotoelectron spectroscopy
C.-L. Wu, C.-H. Shen, and S. Gwo
Appl. Phys. Lett. vol. 88, 032105 (2006)

Ultrafast spectroscopy of stimulated emission in single ZnO tetrapod nanowires
A. B. Djurisic, W. M. Kwok, Y. H. Leung, W. K. Chan, D. L. Phillips, M. S. Lin, and S. Gwo
Nanotechnology vol. 17, pp. 244–249 (2006)

Self-assembled InN quantum dots grown on AlN/Si and GaN/Al2O3 surfaces byplasma-assisted molecular-beam epitaxy under Stranski-Krastanow mode
C.-H. Shen, H.-W. Lin, H.-M. Lee, C.-L. Wu, J.-T. Hsu, and S. Gwo
Thin Solid Films vol. 494, 79–83 (2006)

Carrier concentration dependent optical properties of wurtzite InN epitaxial films on Si(111) studied by spectroscopic ellipsometry
H. Ahn, C.-H. Shen, C. -L. Wu, and S. Gwo
Thin Solid Films vol. 494, pp. 69–73 (2006)

2005

Direct evidence of 8:9 commensurate heterojunction formed between InN and AlN onc-plane
C.-L. Wu, C.-H. Shen, H.-W. Lee, H.-M. Lee, and S. Gwo
Appl. Phys. Lett. vol. 87, 241916 (2005)

Growth mechanism of stacked-cone and smooth-surface GaN nanowires
X. M. Cai, A. B. Djurisic, M. H. Xie, C. S. Chiu, and S. Gwo
Appl. Phys. Lett. vol. 87, 183103 (2005). Color graphic of this work printed as the cover of the 31 October 2005 issue

Epitaxial growth of NiSi2 on (001)Si inside nanoscale contact holes prepared by atomicforce microscope tip-induced local oxidation of the thin Si3N4 layer
S. Y. Chen, L. J. Chen, S. D Tzeng, and S. Gwo
J. Vac. Sci. Technol. B vol. 23, pp. 1905–1908 (2005)

Study of excitonic emission in highly faceted ZnO rods
W. M. Kwok, A. B. Djurisic, Y. H. Leung, W. K. Chan, D. L. Phillips, H. Y. Chen, C. L. Wu, S. Gwo, M. H. Xie
Chem. Phys. Lett. vol. 412, pp. 141–144 (2005)

Spectroscopic ellipsometry study of wurtzite InN epitaxial films on Si(111) with varyingcarrier concentrations
H. Ahn, C.-H. Shen, C.-L. Wu, and S. Gwo
Appl. Phys. Lett. vol. 86, 201905 (2005)

Silicon microlens structures fabricated by scanning-probe gray-scale oxidation
C.-F. Chen, S.-D Tzeng, H.-Y. Chen, and S. Gwo
Optics Lett. vol. 30, pp. 652–654 (2005). Feature story appeared in Laser Focus World (May issue, pp. 15–17, 2005)

2003

Heteroepitaxy of GaN on Si(111) realized with a coincident-interface AlN/ -Si3N4(0001)double-buffer structure
C.-L. Wu, J.-C. Wang, M.-H. Chan, T. T. Chen, and S. Gwo
Appl. Phys. Lett. vol. 83, pp. 4530–4532 (2003)

A study of surface and interlayer structures of epitaxially growth group-III nitridecompound films on Si(111) substrates by second-harmonic generation
C.-S. Chen, J.-T. Lue, C.-L. Wu, S. Gwo, and K.-Y. Lo
J. Phys.-Condens. Mat. vol. 15, pp. 6537–6548 (2003)

Self-limiting size distribution of supported cobalt nanoclusters at room temperature
S. Gwo, C.-P. Chou, C.-L. Wu, Y.-J. Yeh, S.-J. Tsai, W.-C. Lin, and M.-T. Lin
Phys. Rev. Lett. vol. 90, 185506 (2003)

Utilizing the Coulomb force on a carbon nanotube to enhance the resolution of electrostaticforce microscope
T. M. Hong, C.-H. Wu, S. D. Tzeng, and S. Gwo
International Journal of Nanoscience vol. 2, pp. 219–224 (2003)

2002

Charge imaging and manipulation using carbon nanotube probes
S.-D. Tzeng, C.-L. Wu, Y.-C. You, T. T. Chen, S. Gwo, and H. Tokumoto
Appl. Phys. Lett. vol. 81, pp. 5042–5044 (2002)

Interfacial structures of Si3N4 on Si(100) & Si(111)
L. J. Chou, M. L. Huang, J. Y. Hsieh, Y. L. Chueh, S. Gwo, C. C. Hsueh, S. Pan
International Journal of Modern Physics B vol. 16, pp. 4493–4496 (2002)

Silicon nanostructures fabricated by scanning probe oxidation and tetra-methyl ammonium hydroxide etching
F. S.-S. Chien, W. F. Hsieh, S. Gwo, A. E. Vladar, and J. A. Dagata
J. Appl. Phys. vol. 91, pp. 10044–10050 (2002)

Zone-plate-based scanning photoelectron microscopy at SRRC: performance and applications
R. Klauser, I.-H. Hong, T.-H. Lee, G.-C. Yin, D.-H. Wei, K.-L. Tsang, T. J. Chuang, S.-C. Wang, S. Gwo, M. Zharnikov, and J.-D. Liao
Surface Review an d Letters vol. 9, pp. 213–222 (2002)

Thermal nitridation of the Si(111)-(7×7) surface studied by scanning tunneling microscopy and spectroscopy
C.-L. Wu, J.-L. Hsieh, H.-D. Hsueh, and S. Gwo
Phys. Rev. B vol. 65, 045309 (2002)

2001

Nanometer-scale conversion of Si3N4 to SiOx for applications in lithography, micromachining, and selective-area CVD
S. Gwo,T. T. Chen, T. Yasuda, and S. Yamasaki
Phys. Stat. Sol. A vol. 188, pp. 383–387 (2001)

The oxidation states in scanning-probe-induced Si3N4 to SiOx conversion studied by scanning photoemission microscopy
R. Klauser, I.-H. Hong, H.-J. Su, T. T. Chen, S. Gwo, S.-C. Wang, T. J. Chuang, and V. A. Gritsenko
Appl. Phys. Lett. vol. 79, pp. 3143–3145 (2001)

Enhancement of direct optical transition in nano-crystallized GaAsN alloy
S. Gwo, S.-Y. Huang, and T.-R. Yang
Phys. Rev. B vol. 64, 113312 (2001)

(Review Article) Scanning probe oxidation of silicon nitride masks for nanoscale lithography, micromachining, and selective epitaxial growth on silicon
S. Gwo
Journal of Physics and Chemistry of Solids vol. 62, pp. 1673–1687 (2001)

The pin groups in physics: C, P, and T
M. Berg, C. DeWitt-Morette, S. Gwo, E. Kramer
Reviews in Mathematical Physics vol. 13, pp. 953–1034 (2001)

Selective-area chemical vapor deposition of Si using a bilayer dielectric mask patterned by proximal probe oxidation
S. Gwo,T. Yasuda, and S. Yamasaki
J. Vac. Sci. Technol. A vol. 19, pp. 1806–1811 (2001)

(Invited Paper) Scanning probe microscopy and lithography of ultrathin Si3N4 films grown on Si(111) and Si(001)
S. Gwo, F. S.-S. Chien, C.-L. Wu, T. Yasuda, and S. Yamasaki
Jpn. J. Appl. Phys. Part 1 vol. 40, pp. 4368–4372 (2001)

Structure determination of the Si3N4/Si(111)-(8X8) surface: a combined study of Kikuchi electron holography, scanning tunneling microscopy, and ab initio calculations
H. Ahn, C.-L. Wu, S. Gwo, C. M. Wei, and Y. C. Chou
Phys. Rev. Lett. vol. 86, pp. 2818–2821 (2001)

Nano-oxidation of silicon nitride films with an atomic force microscope: chemical mapping, kinetics, and applications
F. S.-S. Chien, Y. C. Chou, T. T. Chen, W.-F. Hsieh, T.-S. Chao, and S. Gwo
J. Appl. Phys. vol. 89, pp. 2465–2472 (2001)

2000

Nanoscale selective-area epitaxial growth of Si using an ultrathin SiO2/Si3Ni4 mask patterned by an atomic force microscope
T. Yasuda, S. Yamasaki, and S. Gwo
Appl. Phys. Lett. vol. 77, pp. 3917–3919 (2000)

Nanometer-scale conversion of Si3N4 to SiOx
F. S.-S. Chien, J.-W. Chang, S.-W. Lin, Y.-C. Chou, T. T. Chen, S. Gwo, T.-S. Chao, and W.-F. Hsieh
Appl. Phys. Lett. vol. 76, pp. 360–362 (2000)

1999

Nanomachining of (110)-oriented silicon by scanning probe lithography and anisotropic wet etching
F. S.-S. Chien, C.-L. Wu, Y.-C. Chou, T. T. Chen, S. Gwo, and W.-F. Hsieh
Appl. Phys. Lett. vol. 75, pp. 2429–2431 (1999)

Improved electrical characteristics of CoSi2 using HF-vapor treatment
Y. H. Wu, W. J. Chen, S. L. Chang, A. Chin, S. Gwo, and C. Tsai
IEEE Electron Device Letters, vol. 20, pp. 200–202 (1999)

Local electric-field-induced oxidation of titanium nitride films
S. Gwo, C.-L. Yeh, P.-F. Chen, Y.-C. Chou, T. T. Chen, T.-S. Chao, S.-F. Hu, and T.-Y. Huang
Appl. Phys. Lett. vol. 74, pp. 1090–1092 (1999)

1997

Atomic-scale nature of the (3X3)-ordered GaAs(001):N surface prepared by plasma-enhanced molecular-beam epitaxy
S. Gwo, H. Tokumoto, S. Miwa
Appl. Phys. Lett. vol. 71, pp. 362–364 (1997)

Nanostructural formation of self-assembled monolayer films on cleaved AlGaAs/GaAs heterojunctions
H. Ohno,L. A. Nagahara, S. Gwo, W. Mizutani, H. Tokumoto
Mol. Cryst. Liquid Cryst. vol. 295, pp. 189–192 (199
Formation of self-assembled monolayer on cleaved compound semiconductor surfaces and its nano-structure on AlGaAs/GaAs heterostructure
H. Ohno, L. A. Nagahara, S. Gwo, W. Mizutani, H. Tokumoto
Journal of the Surface Society of Japan vol. 18, no. 6, pp. 373–379 (1997)

Atomic-scale surface structure and ultrasmooth morphology of molecular-beam epitaxy grown AlAs(001)-(3X2)
S. Gwo, H. Ohno, and H. Tokumoto
Phys. Rev. B (Rapid Communication) vol. 55, pp. R1962–R1965 (1997)

1996

Cross-sectional scanning tunneling microscopy on cleaved Si(111)-observation of novel reconstruction and structural and electrical properties of MOS interface
T. Komeda, S. Gwo, and H. Tokumoto
Jpn. J. Appl. Phys. Part 1 vol. 35, pp. 3724–3729 (1996)

Structural and doping properties of molecular-beam epitaxy grown Si-doped GaAs(001) surfaces
S. Gwo, H. Ohno, S. Miwa, J. F. Fan, and H. Tokumoto
Surf. Sci. vol. 358, pp. 446–450 (1996)

MOS interface characterization by cross-sectional STM
T. Komeda, S. Gwo, and H. Tokumoto
Surf. Sci. vol. 358, pp. 38–41 (1996)

Nanometer-Scale Wires of monolayer height alkanethiols on AlGaAs/GaAs heterostructures by selective chemisorption
H. Ohno, L. A. Nagahara, S. Gwo, and H. Tokumoto
Jpn. J. Appl. Phys. Part 2 vol. 35, pp. L512–L515 (1996)

1995

(Review Article) Cross-sectional scanning tunneling microscopy and spectroscopy of semiconductor heterostructures
S. Gwo, and H. Tokumoto
Journal of the Vacuum Society of Japan vol. 38, pp. 1009–1019 (1995)

Direct observation of precipitates and self-organized nanostructures in molecular-beam epitaxy grown heavily doped GaAs:Si
S. Gwo, S. Miwa, H. Ohno, J. F. Fan, H. Tokumoto
Appl. Phys. Lett. vol. 67, pp. 3123–3125 (1995)

Atomic-scale studies of point defects in compound semiconductors by scanning tunneling microscopy
S. Gwo, H. Ohno, S. Miwa, J. F. Fan, and H. Tokumoto
Material Sciences Forum (Trans Tech Publications, Switzerland), vol. 196-201, pp. 1949–1954 (1995)

1994

A new high-resolution two-dimensional micropositioning device for scanning probe microscopy applications
A. R. Smith, S. Gwo, and C. K. Shih
Rev. Sci. Instrum. vol. 65, pp. 3216–3219 (1994).

Comparative study of cross-sectional scanning tunneling microscopy/spectroscopy on III-V hetero- and homostructures: ultrahigh vacuum-cleaved versus sulfide passivated
A. R. Smith, S. Gwo, K. Sadra, T. C. Shih, B. G. Streetman, and C. K. Shih
J. Vac. Sci. and Technol. B vol. 12, pp. 2610–2615 (1994)

Cross-sectional scanning tunneling microscopy and spectroscopy of passivated III-V heterostructures,
S. Gwo, A. R. Smith, K.J. Chao, C. K. Shih,K. Sadra, and B. G. Streetman,
J. Vac. Sci. and Technol. A vol. 12, pp. 2005–2008 (1994).

Cross-sectional scanning tunneling microscopy of doped and undoped AlGaAs/GaAs heterostructures,
S. Gwo, K. J. Chao, C. K. Shih,
Appl. Phys. Lett. vol. 64, pp. 493–495 (1994)

1993

Direct mapping of electronic structure across Al0.3Ga0.7As/GaAs heterojunctions: Band offsets, asymmetrical transition widths, and multiple-valley band structures
S. Gwo, K. J. Chao, C. K. Shih, K. Sadra, and B. G. Streetman
Phys. Rev. Lett. vol. 71, pp. 1883–1886 (1993)

Scanning tunneling microscopy of doping and compositional III-V homo- and heterostructures
S. Gwo, K. J. Chao, A. R. Smith, C. K. Shih,  K. Sadra, and B. G. Streetman
J. Vac. Sci. and Technol. B vol. 11, pp. 1509–1513 (1993)

Vacancy migration, adatom motion, and atomic bistability on the GaAs(110) surface studied by scanning tunneling microscopy
S. Gwo, A. R. Smith, and C. K. Shih
J. Vac. Sci. Technol. A vol. 11, pp. 1644–1648 (1993)

Site-selective imaging in scanning tunneling microscopy of graphite: The nature of site asymmetry
S. Gwo and C. K. Shih
Phys. Rev. B (Rapid Communication) vol. 47, pp. 13059–13062 (1993)

1992

Scanning tunneling microscopy of GaAs multiple pn-junctions
S. Gwo, A. R. Smith, C. K. Shih, K. Sadra, B. G. Streetman
Appl. Phys. Lett. vol. 61, pp. 1104–1106 (1992)

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