Publications

 2017 2016 2015 2014 2013 2012 2011 2010 2009 | 2008 | 2007 | 2006 | 2005 |

 2004 | 2003 | 2002 | 2001 | 2000 | 1999 | 1997 | 1996 | 1995 | 1994 | 1993 | 1992

 

 

 
2017
2017
  • Nitride Semiconductor Nanorod Heterostructures for Full-Color and White-Light Applications
    S. Gwo, Y.J. Lu, H.W. Lin, C.T. Kuo, C.L. Wu, M.Y. Lu, L.J. Chen
    Semiconductors and Semimetals 96, 341-384 (2017)

 

 
2016
2016
  • Intrinsic electronic properties of high-quality wurtzite InN
    H. Eisele, J. Schuppang, M. Schnedler, M. Duchamp, C. Nenstiel, V. Portz, T. Kure, M. Bügler, A. Lenz, M. Dähne, A. Hoffmann, S. Gwo, S. Choi, J. S. Speck, R. E. Dunin-Borkowski, and Ph. Ebert
    Phys. Rev. B 94, 245201 (2016)
  • Magnetic MoS2 Interface Monolayer on a CdS Nanowire by Cation Exchange
    Chih-Shan Tan, Yu-Jung Lu, Chun-Chi Chen, Pei-Hsuan Liu, Shangjr Gwo, Guang-Yu Guo, and Lih-Juann Chen
    J. Phys. Chem. C 120, 23055-23060 (2016)
  • Epitaxial Growth of atomically smooth aluminum on silicon and its intrinsic optical properties
    Fei Cheng, Ping-Hsiang Su, Junho Choi, Shangjr Gwo, Xiaoqin Li, and Chih-Kang Shih
    ACS Nano 10, 9852-9860 (2016)
  • Nanomanipulation and controlled self-assembly of metal nanoparticles and nanocrystals for plasmonics
    Shangjr Gwo, Hung-Ying Chen, Meng-Hsien Lin, Liuyang Sunc and Xiaoqin Li
    Chemical Society Reviews 45, 5672-5716 (2016)
     
  • Semiconductor plasmonic nanolasers: current status and perspectives
    Shangjr Gwo and Chih-Kang Shih
    Reports on Progress in Physics 79, 086501 (2016)
     
  • Plasmonic metasurfaces for nonlinear optics and quantitative SERS
    Shangjr Gwo, Chun-Yuan Wang, Hung-Ying Chen, Meng-Hsien Lin, Liuyang Sun, Xiaoqin Li, Wei-Liang Chen, Yu-Ming Chang, and Hyeyoung Ahn
    ACS Photonics 3, 1371-1384 (2016)
     
  • Dual-band Planar Plasmonic Unidirectional Launching in a Semi-annular Apertures Array
    Shan Huang, Chun-Yuan Wang, Hung-Ying Chen, Meng-Hsien Lin, Yu-Jung Lu, and Shangjr Gwo
    ACS Photonics 2, 1513–1518 (2016)

 

 
2015
2015
  • Large-Scale Hot Spot Engineering for Quantitative SERS at the Single-Molecule Scale
    Hung-Ying Chen, Meng-Hsien Lin, Chun-Yuan Wang, Yu-Ming Chang, and Shangjr Gwo
    J. Am. Chem. Soc. 
    137, 13698–13705 (2015)

  • Giant colloidal silver crystals for low-loss linear and nonlinear plasmonics
    Chun-Yuan Wang, Hung-Ying Chen, Liuyang Sun, Wei-Liang Chen, Yu-Ming Chang, Hyeyoung Ahn, Xiaoqin Li & Shangjr Gwo
    Nature Communications 6, 7734 (2015)
     

  • Nanoscale Optical Properties of Indium Gallium Nitride/Gallium Nitride Nanodisk-in-Rod Heterostructures 

    Xiang Zhou, Ming-Yen Lu, Yu-Jung Lu, Eric J. Jones, Shangjr Gwo, and Silvija Grade

    ACS Nano. 9, 2868−2875 (2015).

 

 
2014
2014
  • All-Color Plasmonic Nanolasers with Ultralow Thresholds: Autotuning Mechanism for Single-Mode Lasing 

    Yu-Jung Lu, Chun-Yuan Wang, Jisun Kim, Hung-Ying Chen, Ming-Yen Lu, Yen-Chun Chen,

    Wen-Hao Chang, Lih-Juann Chen, Mark I. Stockman, Chih-Kang Shih, and Shangjr Gwo*

    Nano Lett. 14, 4381−4388 (2014).

 

  • A polymer-based SERS-active substrate with gyroid-structured gold multibranches

        Han-Yu Hsueh, Hung-Ying Chen, Yi-Chun Ling, Wei-Shiang HuangYu-Chueh Hung

        Shangjr Gwo and Rong-Ming Ho *
        J. Mater. Chem. C  2, 4667-4675(2014).

 

  • Chain-network anatase/TiO2 (B) thin film with improved photocatalytic efficiency

        Yin-Cheng Yen, Jing-Zhi Chen, Yu-Jung Lu, Shangjr Gwo and Kuan-Jiuh Lin

       Nanotechnology 25, 235602 (2014).

 

 
2013
2013

 

  • Graphene as tunable transparent electrode material on GaN: Layernumber-
    dependent optical and electrical properties

    Hung Wei Shiu, Lo Yueh Chang, Kai-Hsuan Lee, Hung-Ying Chen, Shangjr Gwo, and Chia Hao Chen*
    Appl. Phys. Lett., 103, pp 081604 (2013)

 

 

  • Ultrasensitive Surface Acoustic Wave Detection of Collecic Hetive Plasmonating by Close-Packed Colloidal Gold Nanoparticles Arrays
    Chi-Shun Chiu , Hung-Ying Chen , Chun-Fang Hsiao , Meng-Hsien Lin , and Shangjr Gwo *
    J. Phys. Chem. C, vol.117 (6), pp 2442–2448 (2012)

 

      

 

 
2012

 2012

        

  •  Contrast between Surface Plasmon Polariton-Mediated Extraordinary Optical Transmission Behavior in Epitaxial and Polycrystalline Ag Films in the Mid- and Far-Infrared Regimes

    Bo-Hong Li , Charlotte E. Sanders , James McIlhargey , Fei Cheng , Changzhi Gu , Guanhua Zhang , Kehui Wu , Jisun Kim , S. Hossein Mousavi , Alexander B. Khanikaev , Yu-Jung Lu , Shangjr Gwo, Gennady Shvets *, Chih-Kang Shih *, and Xianggang Qiu            Nano Lett.,12 , pp 6187–6191 (2012)

 

 

 
2011

 2011

 

 

2010

  • Background and Photoexcited Carrier Dependence of Terahertz Radiation from Mg-Doped Nonpolar Indium Nitride Films

    Hyeyoung Ahn, Yi-Jou Yeh, Yu-Liang Hong, and Shangjr Gwo

    Appl. Phys. Express vol. 3, 22105 (2010)

     

  • Inorganic Gyroid with Exceptionally Low Refractive Index from Block Copolymer Templating

    Han-Yu Hsueh, Hung-Ying Chen, Ming-Shiuan She, Chun-Ku Chen, Rong-Ming Ho, Shangjr Gwo, Hirokazu Hasegawa, and Edwin L. Thomas

    Nano Lett. vol. 10 (12), pp 4994–5000 (2010)

     

  • Electronic structure of silicon nitride according to ab initio quantum-chemical calculations and experimental data

    S. S. Nekrashevich, V. A. Gritsenko, R. Klauser and S. Gwo

    Journal of Experimental and Theoretical Physics vol. 111, Issue 4, pp.659-666 (2010)

     

  • Highly Sensitive Hydrogen Detection Using a Pt-Catalyzed InN Epilayer

    Yuh-Hwa Chang, Kai-Kuen Chang, Shangjr Gwo, and J. Andrew Yeh

    Appl. Phys. Express vol. 3, 114101 (2010)

     

  • Terahertz Radiation Mechanism of Native n-Type InN with Different Carrier Concentration
    Jenn-Shyong Hwang, Jung-Tse Tsai, Kuang-I Lin, Ming-Hsun Lee, Chiang-Nan Tsai, Hon-Way Lin, Shangjr Gwo, and Meng-Chu Chen
    Appl. Phys. Express vol. 3, 102202 (2010)

  • InGaN/GaN nanorod array white light-emitting diode
    Hon-Way Lin, Yu-Jung Lu, Hung-Ying Chen,Hong-Mao Lee, and Shangjr Gwo

    Appl. Phys. Lett. vol. 97, 073101 (2010)

  • Carrier dynamics of Mg-doped indium nitride
    H. Ahn, K.-J. Yu, Y.-L. Hong, and S. Gwo

        Appl. Phys. Lett. vol. 97, 062110 (2010)

        

  • Layer-by-Layer Assembly of Three-Dimensional Colloidal Supercrystals with Tunable Plasmonic Properties
    Meng-Hsien Lin, Hung-Ying Chen, and Shangjr Gwo* J. Am. Chem. Soc. vol. 132, pp. 11259–11263 (2010)../images/stories/pdf_icon.png
  • Surface-Plasmon-Mediated Photoluminescence Enhancement from Red-Emitting InGaN Coupled with Colloidal Gold Nanocrystals
    Chen-Ying Wu, Chieh-Lun He, Hong-Mao Lee, Hung-Ying Chen and Shangjr Gwo

        J. Phys. Chem. C vol. 114, pp. 12987–12993 (2010)../images/stories/pdf_icon.png

  • Infrared photoluminescence from α- and β-copper phthalocyanine nanostructures

    W.Y. Tong, H.Y. Chen, A.B. Djurišić, A.M.C. Ng, H. Wang, S. Gwo and W.K. Chan

        Optical Materials vol. 32, Issue 9, pp. 924-927 (2010)../images/stories/pdf_icon.png

  • Resonant Raman Scattering and Dispersion of Polar Optical and Acoustic Phonons in Hexagonal InN

    V. Yu. Davydov, A. A. Klochikhin, A. N. Smirnov, I. Yu. Strashkova, A. S. Krylov, Hai Lu, William J. Schaff, H. -M. Lee, Y. -L. Hong and S. Gwo

        SEMICONDUCTORS vol. 44, pp. 161-170 (2010)../images/stories/pdf_icon.png

  • Chloride ion detection by InN gated AlGaN/GaN high electron mobility transistors

    Byung-Hwan Chu, Hon-Way Lin, Shangjr Gwo, Yu-Lin Wang, S. J. Pearton, J. W. Johnson, P. Rajagopal, J. C. Roberts, E. L. Piner, K. J. Linthicuni, and Fan Ren

        J. Vac. Sci. Technol. B vol. 28, L5 (2010)../images/stories/pdf_icon.png

  • Effects of (NH4)(2)S-x treatment on indium nitride surfaces

    Yuh-Hwa Chang, Yen-Sheng Lu, Yu-Liang Hong, Cheng-Tai Kuo, Shangjr Gwo, and J. Andrew Yeh

        J. Appl. Phys. vol. 107, 043710 (2010)../images/stories/pdf_icon.png

  • Observation of sub-100 femtosecond electron cooling time in InN

    Yi-En Su, Yu-Chieh Wen, Hong-Mao Lee, Shangjr Gwo, and Chi-Kuang Sun

        Appl. Phys. Lett. vol. 96, 052108 (2010) ../images/stories/pdf_icon.png

  • Site-Selective Biofunctionalization of Aluminum Nitride Surfaces Using Patterned Organosilane Self-Assembled Monolayers
    Chi-Shun Chiu, Hong-Mao Lee and Shangjr Gwo*

    Langmuir vol. 26, pp. 2969–2974 (2010)../images/stories/pdf_icon.png

  • Plasmon hybridization in individual gold nanocrystal dimers: Direct observation of bright and dark modes
    S.-C. Yang, H. Kobori, C.-L. He, M.-H. Lin, H.-Y. Chen, C. Li,M. Kanehara, T. Teranishi, and S. Gwo*
    Nano Lett. vol. 10, pp. 632–637 (2010) ../images/stories/pdf_icon.png

  • The electrostatic coupling of longitudinal optical phonon and plasmon in wurtzite InN thin films 
    Y.-M. Chang, S. C. Liou, C. H. Chen, H.-M. Lee, and S. Gwo

    Appl. Phys. Lett. vol. 96, 041908 (2010) ../images/stories/pdf_icon.png

  • The facile fabrication of tunable plasmonic gold nanostructure arrays using microwave plasma

    Chuen-Yuan Hsu, Jing-Wen Huang, Shangjr Gwo and Kuan-Jiuh Lin

    Nanotechnology, vol. 21 035302 (2010) ../images/stories/pdf_icon.png

     
     

     

 

 

2009
 

 

  • Terahertz emission mechanism of magnesium doped indium nitride
    H. Ahn,* Y.-J. Yeh , Y.-L. Hong , S. Gwo
    Appl. Phys. Lett. vol. 95, 232104 (2009) ../images/stories/pdf_icon.png


  • Valence band offset and interface stoichiometry at epitaxial Si3N4/Si(111) heterojunctionsformed by plasma nitridation
    H.-M. Lee, C.-T. Kuo, H.-W. Shiu, C.-H. Chen, and S. Gwo* 
    Appl. Phys. Lett. vol. 95, 222104 (2009) ../images/stories/pdf_icon.png
      
     
  • Well-aligned multi-walled carbon nanotubes emitting natural white-light under microwave irradiation
    J.-W. Su, S. Gwo, and K.-J. Lin* 
    Chem. Commun. pp. 6777–6779(2009)  
    ../images/stories/pdf_icon.png

  • Spectral dependence of time-resolved photoreflectance of InN epitaxial films
    T.-R. Tsai,* C.-Y. Chang, C.-W. Kuo, J.-S. Hwang, T.-Y. Lin, and S. Gwo
    Appl. Phys. Lett. vol. 95, 142108 (2009) 
    ../images/stories/pdf_icon.png

  • GaN/ZnO nanorod light emitting diodes with different emission spectra
    Y. F. Hsu, Y. Y. Xi, A. M. C. Ng, A. B. Djurisic,* W. K. Chan, S. Gwo, H. L. Tam, K. W. Cheah, P. W. K. Fong, H. F. Lui, C. Surya
    Nanotechnology vol. 20, 445201 (2009)  
    ../images/stories/pdf_icon.png


  • Strong green photoluminescence from InxGa1-xN/GaN nanorod arrays
    C.-C. Hong, H. Ahn,* C.-Y. Wu, and S. Gwo
    Optics Express vol. 17, pp. 17227–17233 (2009)    
    ../images/stories/pdf_icon.png


  • Investigation on -c-InN and a-InN:Mg field effect transistors under electrolyte gate bias
    Y.-S. Lu, Y.-H. Chang, J. A. Yeh,* Y.-L. Lin, H.-M. Lee, and S. Gwo
    Appl. Phys. Lett. vol. 95, 102104 (2009)   
    ../images/stories/pdf_icon.png


  • Selective excitation of E1(LO) and A1(LO) phonons with large wave vectors in the Ramanspectra of hexagonal InN
    V. Yu. Davydov,* A. A. Klochikhin, A. N. Smirnov, I. Yu. Strashkova, A. S. Krylov, H. Lu, W. J. Schaff, H.-M. Lee, Y.-L. Hong, and S. Gwo
    Phys. Rev. B (Rapid Communication) vol. 80, 081204(R) (2009)   
    ../images/stories/pdf_icon.png


  • Multilength-scale chemical patterning of self-assembled monolayers by spatially controlledplasma exposure: Nanometer to centimeter range
    M.-H. Lin, C.-F. Chen, H.-W. Shiu, C.-H. Chen, and S. Gwo*
    J. Am. Chem. Soc. vol. 131, pp. 10984–10991 (2009)    
    ../images/stories/pdf_icon.png


  • Direct imaging of GaN p-n junction by cross-sectional scanning photoelectron microscopyand spectroscopy
    C.-T. Kuo, H.-M. Lee, H.-W. Shiu, C.-H. Chen, and S. Gwo*
    Appl. Phys. Lett. vol. 94, 122110 (2009)    
    ../images/stories/pdf_icon.png


  • Carrier and phonon dynamics of wurtzite InN nanorods
    Y.-M. Chang* and S. Gwo
    Appl. Phys. Lett. vol. 94, 071911 (2009)    
    ../images/stories/pdf_icon.png


     
  • Localized states in InxGa1–xN epitaxial film
    H.-S. Chang, T. M. Hsu,* T.-F. Chuang, W.-Y. Chen, S. Gwo, and C.-H. Shen,
    Solid State Communications vol. 149, pp. 18–20 (2009)    
    ../images/stories/pdf_icon.png

 

 

2008

 

  • Surface states on the n-InN-electrolyte interface
    A. A. Gutkin, M. E. Rudinsky, P. N. Brunkov, A. A. Klochikhin, V. Yu. Davydov, H.-Y. Chen, and S. Gwo
    Semiconductor vol. 42, pp. 1416–1419 (2008)



  • Fabrication of porous carbon nanotube network
    J.-W. Su, S.-J. Fu, S. Gwo, and K.-J. Lin
    Chem. Commun. pp. 5631–5632 (2008)    




  • Immobilization of DNA–Au nanoparticles on aminosilane-functionalized aluminumnitride epitaxial films for surface acoustic wave sensing
    C.-S. Chiu, H.-M. Lee, C.-T. Kuo, and S. Gwo
    Appl. Phys. Lett. vol. 93, 163106 (2008)    




  • Direct probe of the built-in electric field of Mg-doped a-plane wurtzite InN surfaces withtime-resolved electric-field-induced second harmonic generation
    Y.-M. Chang, Y.-L. Hong, and S. Gwo
    Appl. Phys. Lett. vol. 93, 131106 (2008)     




  • Absence of Fermi level pinning at cleaved nonpolar InN surfaces
    C.-L. Wu, H.-M. Lee, C.-T. Kuo, C.-H. Chen, and S. Gwo
    Phys. Rev. Lett. vol. 101, 106803 (2008)     




  • Polarized photoluminescence from single GaN nanorods: Effects of optical confinement
    H.-Y. Chen, Y.-C. Yang, H.-W. Lin, S.-C. Chang, and S. Gwo
    Optics Express vol. 16, pp.13465–13475 (2008)     




  • Ultrafast E1(LO) phonon and plasmon dynamics in a-plane wurtzite InN
    Y.-M. Chang, H.-W. Lin, Y.-L. Hong, and S. Gwo
    J. Appl. Phys. Lett. vol. 104, 036105 (2008)     




  • Two-dimensional carrier profiling by Kelvin-probe force Microscopy
    B.-Y. Tsui, C.-M. Hsieh, P.-C. Su, S.-D. Tzeng, and S. Gwo
    Jpn J. Appl. Phys. vol. 47, pp. 4448–4453 (2008)     



  • Observation of femtosecond carrier thermalization time in indium nitride
    S.-Z. Sun, Y.-C. Wen, S.-H. Guol, H.-M. Lee, S. Gwo, and C.-K. Sun
    J. Appl. Phys. vol. 103, 123513 (2008)     



  • Anion detection using ultrathin InN ion selective field effect transistors
    Y.-S. Lu, C.-L. Ho, J. A. Yeh, H.-W. Lin, and S. Gwo
    Appl. Phys. Lett. vol. 92, 212102 (2008)    




  • Gallium nitride nanorod arrays as low-refractive-index transparent media in the entirevisible spectral region
    H.-Y. Chen, H.-W. Lin, C.-Y. Wu, W.-C. Chen, J.-S. Chen, and S. Gwo
    Optics Express vol. 16, pp. 8106–8116 (2008)     




  • Facile synthesis of large scale Er-doped ZnO flower-like structures with enhanced 1.54 m infrared emission
    W.-C. Yang, C.-W. Wang, J.-H. He, Y.-C. Chang, J.-C. Wang, L.-J. Chen, H.-Y. Chen, and S. Gwo
    Phys. Stat. Sol. A vol. 205, pp. 1190–1195 (2008)         




  • SIMS and Raman studies of Mg-doped InN
    V. Yu. Davydov, A. A. Klochikhin, M. B. Smirnov, Yu. E. Kitaev, A. N. Smirnov, E. Y. Lundina, H. Lu, W. J. Schaff, H.-M. Lee, H.-W. Lin, Y.-L. Hong, S. Gwo
    Phys. Stat. Sol. C vol. 5, pp. 1648–1651 (2008)     



  • Quantitative surface acoustic wave detection based on gold nanoparticles and theirbioconjugates
    C.-S. Chiu and S. Gwo
    Anal. Chem. vol. 80, pp. 3318–3326 (2008)     



  • Cross-sectional photoelectron microscopy and spectroscopy of wurtzite InN/GaNheterojunction: Measurement of intrinsic band lineup
    C.-L. Wu, H.-M. Lee, C.-T. Kuo, C.-H. Chen, and S. Gwo
    Appl. Phys. Lett. vol. 92, 162106 (2008)     



  • Intense terahertz emission from a-plane InN surface
    H. Ahn, Y.-P. Ku, C.-H. Chuang, C.-L. Pan, H.-W. Lin, Y.-L. Hong, and S. Gwo
    Appl. Phys. Lett. vol. 92, 102103 (2008)     



  • Tunable plasmonic response from alkanethiolate-stabilized gold nanoparticle superlattices:Evidence of near-field coupling
    C.-F. Chen, S.-D. Tzeng, H.-Y. Chen, K.-J. Lin, and S. Gwo
    J. Am. Chem. Soc. (Communication) vol. 130, pp. 824–826 (2008)     


 

2007

 

  • Classical and quantum solutions of the planar accumulation layer problem within theparabolic effective-mass approximation,
    A. A. Klochikhin, V. Yu. Davydov, I. Yu. Strashkova, and S. Gwo,
    Phys. Rev. B vol. 76, 235325 (2007)     



  • InN-based anion selective sensors in aqueous solutions,
    Y.-S. Lu, C.-C. Huang, J. A. Yeh, C.-F. Chen, and S. Gwo,
    Appl. Phys. Lett. vol. 91, 202109 (2007)    



  • Enhanced chemical shift of carbon nanotube from laser assisted gas incorporation
    C.-H. Chuang, C.-H. Chen, Y.-M. Chang, C.-W. Peng, S.-S. Wong, S.-D. Tzeng, S. Gwo, Y. Zhu, C.-H. Sow, and M.-T. Lin
    Appl. Phys. Lett. vol. 91, 183101 (2007)     



  • Direct measurement of momentum relaxation time in wurtzite InN
    Y.-M. Chang, and S. Gwo
    J. Appl. Phys. vol. 102, 083540 (2007).    



  • Terahertz spectroscopic study of vertically-aligned InN nanorods
    H. Ahn, Y.-P. Ku, Y.-C. Wang, C.-H. Chuang, S. Gwo, C.-L. Pan
    Appl. Phys. Lett. vol. 91, 163105 (2007)     



  • Terahertz emission from vertically aligned InN nanorod arrays
    H. Ahn, Y.-P. Ku, Y.-C. Wang, C.-H. Chuang, S. Gwo, C.-L. Pan
    Appl. Phys. Lett. vol. 91, 132108 (2007)     



  • Experimental and theoretical studies of lattice dynamics of Mg-doped InN
    V. Yu. Davydov, A. A. Klochikhin, M. B. Smirnov, A. N. Smirnov, I. N. Goncharuk, D. A. Kurdyukov, H. Lu, W. J. Schaff, H.-M. Lee, H.-W. Lin, S. Gwo
    Appl. Phys. Lett. vol. 91, 111917 (2007)     




  • Polarization-induced valence-band alignments at cation- and anion-polar InN/GaNheterojunctions
    C.-L. Wu, H.-M. Lee, C.-T. Kuo, S. Gwo, and C.-H. Hsu
    Appl. Phys. Lett. vol. 91, 042112 (2007)     



  • Ultrafast hot electron relaxation time anomaly in InN epitaxial films
    T.-R. Tsai, C.-F. Chang, and S. Gwo
    Appl. Phys. Lett. vol. 90, 252111 (2007)     



  • Electron-density dependence of longitudinal-optical phonon lifetime in InN studied bysubpicosecond time-resolved Raman spectroscopy
    K. T. Tsen, J. G. Kiang, D. K. Ferry, H. Lu, W. J. Schaff, H.-W. Lin, and S. Gwo
    J. Phys.-Condens. Mat. vol. 19, 236219 (2007)     



  • Calculations of optical properties of an annular dielectric mirror
    C.-J. Wu and S. Gwo
    J. of Electromagn. Waves and Appl. vol. 21, pp. 821–827 (2007).    


     
  • Band bending of n-InN epilayers and exact solution of the classical Thomas-Fermiequation
    A. A. Klochikhin, V. Yu. Davydov, I. Yu. Strashkova, P. N. Brunkov, A. A. Gutkin, M. E. Rudinsky, H.-Y. Chen, and S. Gwo
    Phys. Stat. Sol.-Rapid Res. Lett. vol. 1, pp. 159–161 (2007)     



  • Subpicosecond time-resolved Raman studies of electron-longitudinal optical phononinteractions in InN
    K. T. Tsen, J. G. Kiang, D. K. Ferry, H. Lu, W. J. Schaff, H.-W. Lin, and S. Gwo
    Appl. Phys. Lett. vol. 90, 172108 (2007)     



  • Direct measurements of the lifetimes of longitudinal optical phonon modes and theirdynamics in InN
    K. T. Tsen, J. G. Kiang, D. K. Ferry, H. Lu, W. J. Schaff, H.-W. Lin, and S. Gwo
    Appl. Phys. Lett. vol. 90, 152107 (2007)     



  • Effects of proton irradiation on electrical and optical properties of n-InN
    V. V. Emtsev, V. Yu. Davydov, A. A. Klochikhin, A. V. Sakharov, A. N. Smirnov, V. V. Kozlovskii, C.-L. Wu, C.-H. Shen, and S. Gwo
    Phys. Stat. Sol. C vol. 4, pp. 2589–2592 (2007)     



  • Unusual photoluminescence properties of vertically aligned InN nanorods grown byplasma-assisted molecular-beam epitaxy
    C.-H. Shen, H.-Y. Chen, H.-W. Lin, C.-Y. Wu, C.-H. Chen, S. Gwo, A. A. Klochikhin, and V. Yu. Davydov
    Phys. Stat. Sol. C vol. 4, pp. 2465–2468 (2007)     



  • High current density InN/AlN heterojunction field-effect transistor with a SiNx gatedielectric layer
    Y.-S. Lin, S.-H. Koa, C.-Y. Chan, and S. S. H. Hsu, H.-M. Lee and S. Gwo
    Appl. Phys. Lett. vol. 90, 142111(2007)     



  • Determination of the electron effective mass of wurtzite InN by coherent upper-branchA1(LO) phonon-plasmon coupling mode
    Y.-M. Chang, H. W. Chu, C.-H. Shen, H.-Y. Chen, and S. Gwo
    Appl. Phys. Lett. vol. 90, 072111 (2007)    



  • Identification of surface optical phonon in wurtzite InN epitaxial thin films by coherentphonon spectroscopy
    Y.-M. Chang, H. W. Chu, C.-H. Shen, and S. Gwo
    Appl. Phys. Lett. vol. 90, 072110 (2007)     



 

 

2006

 

  • Organosilane functionalization of InN surface
    C.-F. Chen, C.-L. Wu, and S. Gwo
    Appl. Phys. Lett. vol. 89, 252109 (2006)     


  • Structure and photoluminescence properties of epitaxially oriented GaN nanorods grownon Si(111) by plasma-assisted molecular-beam epitaxy
    H.-Y. Chen, H.-W. Lin, C.-H. Shen, and S. Gwo
    Appl. Phys. Lett. vol. 89, 243105 (2006)      



  • Synthesis of pyramidal copper nanoparticles on gold substrate
    W.-Y. Ko, W.-H. Chen, S.-D. Tzeng, S. Gwo, and K.-J. Lin
    Chem. Mater. vol. 18, pp. 6097–6099 (2006)      



  • Ultrafast carrier thermalization in InN
    Y.-C. Wen, C.-Y. Chen, C.-H. Shen, S. Gwo, and C.-K. Sun
    Appl. Phys. Lett. vol. 89, 232114 (2006)      



  • Near-infrared photoluminescence of vertically aligned InN nanorods grown on Si(111) byplasma-assisted molecular-beam epitaxy
    H.-Y. Chen, C.-H. Shen, H.-W. Lin, C.-H. Chen, C.-Y. Wu, S. Gwo, V. Yu. Davydov, and A. A. Klochikhin
    Thin Solid Films vol. 515, 961–966 (2006)     



  • Metal phthalocyanine nanoribbons and nanowires
    W. Y. Tong, A. B. Djurisic , M. H. Xie, A. C. M. Ng, K. Y. Cheung, W. K. Chan, Y. H. Leung, H. W. Lin, and S. Gwo
    J. Phys. Chem. B vol. 110, pp. 17406–17413 (2006)        



  • Electrostatic assembly of gold colloidal nanoparticles on organosilane monolayerspatterned by microcontact electrochemical conversion
    C.-F. Chen, S.-D. Tzeng, M.-H. Lin, and S. Gwo
    Langmuir vol. 22, pp. 7819–7824 (2006).     


  • Charge trapping properties at Si3N4/SiO2 interface studied by variable-temperatureelectrostatic force microscopy
    S.-D. Tzeng and S. Gwo
    J. Appl. Phys. vol. 100, 023711 (2006)      



  • Near-infrared photoluminescence from vertical InN nanorod arrays grown on silicon:Effects of surface electron accumulation layer
    C.-H. Shen, H.-Y. Chen, H.-W. Lin, S. Gwo, A. A. Klochikhin, and V. Yu. Davydov
    Appl. Phys. Lett. vol. 88, 253104 (2006)      


  • Straight and helical InGaN core-shell nanowires with a high In core content
    X. M. Cai, Y. H. Leung, K. Y. Cheung, K. H. Tam, A. B. Djurisic, M. H. Xie, H. Y. Chen, and S. Gwo
    Nanotechnology vol. 17, pp. 2330–2333 (2006)     



  • Templated self-assembly of colloidal nanoparticles controlled by electrostaticnanopatterning on Si3N4/SiO2/Si electret
    S.-D Tzeng, K.-J. Lin, J.-C. Hu, L.-J. Chen, and S. Gwo
    Advanced Materials vol. 18, pp. 1147–1151 (2006)    



  • Green, yellow, and orange defect emission from ZnO nanostructures: influence ofexcitation wavelength
    A. B. Djurisic, Y. H. Leung , K. H. Tam , L. Ding , W. K. Ge , H. Y. Chen , and S. Gwo
    Appl. Phys. Lett. vol. 88, 103107 (2006). Color graphic of this work printed as the cover of the 6 March 2006 issue     



  • The effects of AlN buffer on the properties of InN epitaxial films grown on Si(111) byplasma-assisted molecular-beam epitaxy
    C.-L. Wu, C.-H. Shen, H.-Y. Chen, S.-J. Tsai, H.-W. Lin, H.-M. Lee, and S. Gwo, T.-F. Chuang, H.-S. Chang, and T. M. Hsu
    J. of Cryst. Growth vol. 288, pp. 247–253 (2006)      



  • Optical properties of highly faceted ZnO rods
    A. B. Djurisic, W. M. Kwok, W. K. Chan, D. L. Phillips, H. Y. Chen, C. L. Wu, and S. Gwo
    J. Appl. Phys. vol. 99, 033517 (2006)     



  • Valence band offset of wurtzite InN/AlN commensurate heterojunction determined byphotoelectron spectroscopy
    C.-L. Wu, C.-H. Shen, and S. Gwo
    Appl. Phys. Lett. vol. 88, 032105 (2006)     


  • Ultrafast spectroscopy of stimulated emission in single ZnO tetrapod nanowires
    A. B. Djurisic, W. M. Kwok, Y. H. Leung, W. K. Chan, D. L. Phillips, M. S. Lin, and S. Gwo
    Nanotechnology vol. 17, pp. 244–249 (2006)     



  • Self-assembled InN quantum dots grown on AlN/Si and GaN/Al2O3 surfaces byplasma-assisted molecular-beam epitaxy under Stranski-Krastanow mode
    C.-H. Shen, H.-W. Lin, H.-M. Lee, C.-L. Wu, J.-T. Hsu, and S. Gwo
    Thin Solid Films vol. 494, 79–83 (2006)    


  • Carrier concentration dependent optical properties of wurtzite InN epitaxial films on Si(111) studied by spectroscopic ellipsometry
    H. Ahn, C.-H. Shen, C. -L. Wu, and S. Gwo
    Thin Solid Films vol. 494, pp. 69–73 (2006)    


 

 

 

 

 

2005

 

  • Direct evidence of 8:9 commensurate heterojunction formed between InN and AlN onc-plane
    C.-L. Wu, C.-H. Shen, H.-W. Lee, H.-M. Lee, and S. Gwo
    Appl. Phys. Lett. vol. 87, 241916 (2005)      



  • Growth mechanism of stacked-cone and smooth-surface GaN nanowires
    X. M. Cai, A. B. Djurisic, M. H. Xie, C. S. Chiu, and S. Gwo
    Appl. Phys. Lett. vol. 87, 183103 (2005). Color graphic of this work printed as the cover of the 31 October 2005 issue         


     
  • Epitaxial growth of NiSi2 on (001)Si inside nanoscale contact holes prepared by atomicforce microscope tip-induced local oxidation of the thin Si3N4 layer
    S. Y. Chen, L. J. Chen, S. D Tzeng,, and S. Gwo
    J. Vac. Sci. Technol. B vol. 23, pp. 1905–1908 (2005)    



  • Study of excitonic emission in highly faceted ZnO rods
    W. M. Kwok, A. B. Djurisic, Y. H. Leung, W. K. Chan, D. L. Phillips, H. Y. Chen, C. L. Wu, S. Gwo, M. H. Xie
    Chem. Phys. Lett. vol. 412, pp. 141–144 (2005)      


  • Spectroscopic ellipsometry study of wurtzite InN epitaxial films on Si(111) with varyingcarrier concentrations
    H. Ahn, C.-H. Shen, C.-L. Wu, and S. Gwo
    Appl. Phys. Lett. vol. 86, 201905 (2005)     



  • Silicon microlens structures fabricated by scanning-probe gray-scale oxidation
    C.-F. Chen, S.-D Tzeng, H.-Y. Chen, and S. Gwo
    Optics Lett. vol. 30, pp. 652–654 (2005). Feature story appeared in Laser Focus World (May issue, pp. 15–17, 2005)      


     

 

 

 

2004

 

  • Size- and shape-controlled GaN nanocrystals grown on Si(111) substrate by reactiveepitaxy
    C.-L. Wu, L-J. Chou, and S. Gwo
    Appl. Phys. Lett. vol. 85, pp. 2071–2073 (2004)     



  • Position-specific formation of epitaxial Si grains on thermally oxidized Si(001) surfacesvia isolated nanodots
    T. Yasuda, T. Tada, S. Yamasaki, S. Gwo, and. L.-S. Hong
    Chem. Mater. vol. 16, pp. 3518–3523 (2004)     



  • Heteroepitaxial growth of wurtzite InN films on Si(111) exhibiting strong near-infraredphotoluminescence at room temperature
    S. Gwo, C.-L. Wu, C.-H. Shen, W.-H. Chang, T. M. Hsu, J.-S. Wang, and J.-T. Hsu
    Appl. Phys. Lett. vol. 84, pp. 3765–3767 (2004)     

     
 

2003

 

  • Heteroepitaxy of GaN on Si(111) realized with a coincident-interface AlN/ -Si3N4(0001)double-buffer structure
    C.-L. Wu, J.-C. Wang, M.-H. Chan, T. T. Chen, and S. Gwo
    Appl. Phys. Lett. vol. 83, pp. 4530–4532 (2003)     


  • A study of surface and interlayer structures of epitaxially growth group-III nitridecompound films on Si(111) substrates by second-harmonic generation
    C.-S. Chen, J.-T. Lue,
    C.-L. Wu, S. Gwo, and K.-Y. Lo
    J. Phys.-Condens. Mat. vol. 15, pp. 6537–6548 (2003)
         


     
  • Self-limiting size distribution of supported cobalt nanoclusters at room temperature
    S. Gwo, C.-P. Chou, C.-L. Wu, Y.-J. Yeh, S.-J. Tsai, W.-C. Lin, and M.-T. Lin
    Phys. Rev. Lett. vol. 90, 185506 (2003)     


     
  • Utilizing the Coulomb force on a carbon nanotube to enhance the resolution of electrostaticforce microscope
    T. M. Hong, C.-H. Wu, S. D. Tzeng, and S. Gwo
    International Journal of Nanoscience vol. 2, pp. 219–224 (2003)     

       

 

 

 

2002

 

  • Charge imaging and manipulation using carbon nanotube probes
    S.-D. Tzeng, C.-L. Wu, Y.-C. You, T. T. Chen, S. Gwo, and H. Tokumoto
    Appl. Phys. Lett. vol. 81, pp. 5042–5044 (2002)     



  • Interfacial structures of Si3N4 on Si(100) & Si(111)
    L. J. Chou, M. L. Huang, J. Y. Hsieh, Y. L. Chueh, S. Gwo, C. C. Hsueh, S. Pan
    International Journal of Modern Physics B vol. 16, pp. 4493–4496 (2002)     



  • Silicon nanostructures fabricated by scanning probe oxidation and tetra-methyl ammonium hydroxide etching
    F. S.-S. Chien, W. F. Hsieh, S. Gwo, A. E. Vladar, and J. A. Dagata
    J. Appl. Phys. vol. 91, pp. 10044–10050 (2002)     



  • Zone-plate-based scanning photoelectron microscopy at SRRC: performance and applications
    R. Klauser, I.-H. Hong, T.-H. Lee, G.-C. Yin, D.-H. Wei, K.-L. Tsang, T. J. Chuang, S.-C. Wang, S. Gwo, M. Zharnikov, and J.-D. Liao
    Surface Review an d Letters vol. 9, pp. 213–222 (2002)     


     
  • Thermal nitridation of the Si(111)-(7×7) surface studied by scanning tunneling microscopy and spectroscopy
    C.-L. Wu, J.-L. Hsieh, H.-D. Hsueh, and S. Gwo
    Phys. Rev. B vol. 65, 045309 (2002)     
     

       
 

2001

 

  • Nanometer-scale conversion of Si3N4 to SiOx for applications in lithography, micromachining, and selective-area CVD
    S. Gwo, T. T. Chen, T. Yasuda, and S. Yamasaki
    Phys. Stat. Sol. A vol. 188, pp. 383–387 (2001)     



  • The oxidation states in scanning-probe-induced Si3N4 to SiOx conversion studied by scanning photoemission microscopy
    R. Klauser, I.-H. Hong, H.-J. Su, T. T. Chen, S. Gwo, S.-C. Wang, T. J. Chuang, and V. A. Gritsenko
    Appl. Phys. Lett. vol. 79, pp. 3143–3145 (2001)     

     
  • Enhancement of direct optical transition in nano-crystallized GaAsN alloy
    S. Gwo, S.-Y. Huang, and T.-R. Yang
    Phys. Rev. B vol. 64, 113312 (2001)     

  • (Review Article) Scanning probe oxidation of silicon nitride masks for nanoscale lithography, micromachining, and selective epitaxial growth on silicon
    S. Gwo
    Journal of Physics and Chemistry of Solids vol. 62, pp. 1673–1687 (2001)     


     
  • The pin groups in physics: C, P, and T
    M. Berg, C. DeWitt-Morette, S. Gwo, E. Kramer
    Reviews in Mathematical Physics vol. 13, pp. 953–1034 (2001)     


  • Selective-area chemical vapor deposition of Si using a bilayer dielectric mask patterned by proximal probe oxidation
    S. Gwo, T. Yasuda, and S. Yamasaki
    J. Vac. Sci. Technol. A vol. 19, pp. 1806–1811 (2001)     


  • (Invited Paper) Scanning probe microscopy and lithography of ultrathin Si3N4 films grown on Si(111) and Si(001)
    S. Gwo, F. S.-S. Chien, C.-L. Wu, T. Yasuda, and S. Yamasaki
    Jpn. J. Appl. Phys. Part 1 vol. 40, pp. 4368–4372 (2001)     


  • Structure determination of the Si3N4/Si(111)-(8X8) surface: a combined study of Kikuchi electron holography, scanning tunneling microscopy, and ab initio calculations
    H. Ahn, C.-L. Wu, S. Gwo, C. M. Wei, and Y. C. Chou
    Phys. Rev. Lett. vol. 86, pp. 2818–2821 (2001)     


  • Nano-oxidation of silicon nitride films with an atomic force microscope: chemical mapping, kinetics, and applications
    F. S.-S. Chien, Y. C. Chou, T. T. Chen, W.-F. Hsieh, T.-S. Chao, and S. Gwo
    J. Appl. Phys. vol. 89, pp. 2465–2472 (2001)     


     
 

2000

  

  • Nanoscale selective-area epitaxial growth of Si using an ultrathin SiO2/Si3Ni4 mask patterned by an atomic force microscope
    T. Yasuda, S. Yamasaki, and S. Gwo
    Appl. Phys. Lett. vol. 77, pp. 3917–3919 (2000)     



  • Nanometer-scale conversion of Si3N4 to SiOx
    F. S.-S. Chien, J.-W. Chang, S.-W. Lin, Y.-C. Chou, T. T. Chen, S. Gwo, T.-S. Chao, and W.-F. Hsieh
    Appl. Phys. Lett. vol. 76, pp. 360–362 (2000)     


 
 

 

 

1999

 

  • Nanomachining of (110)-oriented silicon by scanning probe lithography and anisotropic wet etching
    F. S.-S. Chien, C.-L. Wu, Y.-C. Chou, T. T. Chen, S. Gwo, and W.-F. Hsieh
    Appl. Phys. Lett. vol. 75, pp. 2429–2431 (1999)     


  • Improved electrical characteristics of CoSi2 using HF-vapor treatment
    Y. H. Wu, W. J. Chen, S. L. Chang, A. Chin, S. Gwo, and C. Tsai
    IEEE Electron Device Letters, vol. 20, pp. 200–202 (1999)     


  • Local electric-field-induced oxidation of titanium nitride films
    S. Gwo, C.-L. Yeh, P.-F. Chen, Y.-C. Chou, T. T. Chen, T.-S. Chao, S.-F. Hu, and T.-Y. Huang
    Appl. Phys. Lett. vol. 74, pp. 1090–1092 (1999)     

 

 

1997

 

  • Atomic-scale nature of the (3X3)-ordered GaAs(001):N surface prepared by plasma-enhanced molecular-beam epitaxy
    S. Gwo, H. Tokumoto, S. Miwa
    Appl. Phys. Lett. vol. 71, pp. 362–364 (1997)     


  • Nanostructural formation of self-assembled monolayer films on cleaved AlGaAs/GaAs heterojunctions
    H. Ohno, L. A. Nagahara, S. Gwo, W. Mizutani, H. Tokumoto
    Mol. Cryst. Liquid Cryst. vol. 295, pp. 189–192 (1997)

     
  • Formation of self-assembled monolayer on cleaved compound semiconductor surfaces and its nano-structure on AlGaAs/GaAs heterostructure
    H. Ohno, L. A. Nagahara, S. Gwo, W. Mizutani, H. Tokumoto
    Journal of the Surface Society of Japan vol. 18, no. 6, pp. 373–379 (1997)

     
  • Atomic-scale surface structure and ultrasmooth morphology of molecular-beam epitaxy grown AlAs(001)-(3X2)
    S. Gwo, H. Ohno, and H. Tokumoto
    Phys. Rev. B (Rapid Communication) vol. 55, pp. R1962–R1965 (1997)     


 

 

1996

 

  • Cross-sectional scanning tunneling microscopy on cleaved Si(111)-observation of novel reconstruction and structural and electrical properties of MOS interface
    T. Komeda, S. Gwo, and H. Tokumoto
    Jpn. J. Appl. Phys. Part 1 vol. 35, pp. 3724–3729 (1996)     



     
  • Structural and doping properties of molecular-beam epitaxy grown Si-doped GaAs(001) surfaces
    S. Gwo, H. Ohno, S. Miwa, J. F. Fan, and H. Tokumoto
    Surf. Sci. vol. 358, pp. 446–450 (1996)     



     
  • MOS interface characterization by cross-sectional STM
    T. Komeda, S. Gwo, and H. Tokumoto
    Surf. Sci. vol. 358, pp. 38–41 (1996)     



     
  • Nanometer-Scale Wires of monolayer height alkanethiols on AlGaAs/GaAs heterostructures by selective chemisorption
    H. Ohno, L. A. Nagahara, S. Gwo, and H. Tokumoto
    Jpn. J. Appl. Phys. Part 2 vol. 35, pp. L512–L515 (1996)     

 

 

1995

 

  • (Review Article) Cross-sectional scanning tunneling microscopy and spectroscopy of semiconductor heterostructures
    S. Gwo, and H. Tokumoto
    Journal of the Vacuum Society of Japan vol. 38, pp. 1009–1019 (1995)

     
  • Direct observation of precipitates and self-organized nanostructures in molecular-beam epitaxy grown heavily doped GaAs:Si
    S. Gwo, S. Miwa, H. Ohno, J. F. Fan, H. Tokumoto
    Appl. Phys. Lett. vol. 67, pp. 3123–3125 (1995)     



  • Atomic-scale studies of point defects in compound semiconductors by scanning tunneling microscopy
    S. Gwo, H. Ohno, S. Miwa, J. F. Fan, and H. Tokumoto
    Material Sciences Forum (Trans Tech Publications, Switzerland), vol. 196-201, pp. 1949–1954 (1995)

 

 

1994

 

  • A new high-resolution two-dimensional micropositioning device for scanning probe microscopy applications
    A. R. Smith, S. Gwo, and C. K. Shih
    Rev. Sci. Instrum. vol. 65, pp. 3216–3219 (1994). 
       
 
  • Comparative study of cross-sectional scanning tunneling microscopy/spectroscopy on III-V hetero- and homostructures: ultrahigh vacuum-cleaved versus sulfide passivated
    A. R. Smith, S. Gwo, K. Sadra, T. C. Shih, B. G. Streetman, and C. K. Shih
    J. Vac. Sci. and Technol. B vol. 12, pp. 2610–2615 (1994).   
     
 
  • Cross-sectional scanning tunneling microscopy and spectroscopy of passivated III-V heterostructures,
    S. Gwo, A. R. Smith, K.J. Chao, C. K. Shih, K. Sadra, and B. G. Streetman,
    J. Vac. Sci. and Technol. A vol. 12, pp. 2005–2008 (1994).
       
     
 
  • Cross-sectional scanning tunneling microscopy of doped and undoped AlGaAs/GaAs heterostructures,
    S. Gwo, K. J. Chao, C. K. Shih,
    Appl. Phys. Lett. vol. 64, pp. 493–495 (1994).  
      

 

 

1993
 

 

  • Direct mapping of electronic structure across Al0.3Ga0.7As/GaAs heterojunctions: Band offsets, asymmetrical transition widths, and multiple-valley band structures
    S. Gwo, K. J. Chao, C. K. Shih, K. Sadra, and B. G. Streetman
    Phys. Rev. Lett. vol. 71, pp. 1883–1886 (1993)
       



  • Scanning tunneling microscopy of doping and compositional III-V homo- and heterostructures
    S. Gwo, K. J. Chao, A. R. Smith, C. K. Shih,  K. Sadra, and B. G. Streetman
    J. Vac. Sci. and Technol. B vol. 11, pp. 1509–1513 (1993)
             


     
  • Vacancy migration, adatom motion, and atomic bistability on the GaAs(110) surface studied by scanning tunneling microscopy
    S. Gwo, A. R. Smith, and C. K. Shih
    J. Vac. Sci. Technol. A vol. 11, pp. 1644–1648 (1993)     


  • Site-selective imaging in scanning tunneling microscopy of graphite: The nature of site asymmetry
    S. Gwo and C. K. Shih
    Phys. Rev. B (Rapid Communication) vol. 47, pp. 13059–13062 (1993)
     

 

 

1992

 

  • Scanning tunneling microscopy of GaAs multiple pn-junctions
    S. Gwo, A. R. Smith, C. K. Shih, K. Sadra, B. G. Streetman
    Appl. Phys. Lett. vol. 61, pp. 11041106 (1992)